Prof D Chu
Timing and Structure
Lent term. 14 lectures (including examples classes). Assessment: 100% exam
3B5 and 3B6 useful
The aims of the course are to:
- introduce the student to the theory, and design of MOS Field-Effect Transistors (MOSFETs), based on both single crystal and thin-film materials.
- introduce examples of applications of MOSFETs
As specific objectives, by the end of the course students should be able to:
- understand MOSFET theory and standard approximations.
- correlate material properties and conduction mechanisms with the MOSFET electrical characteristics, for single crystal, amorphous and polycrystalline devices.
- understand the basic properties of ferroelectrics and its application for memory devices.
- understand the concept of giant magneto-resistance and its applications including non-volatile memory devices.
- understand the operation of liquid crystal displays.
- understand the construction and operation of micromechanical displays, and other emerging display technologies.
The aim of this module is to introduce the student to the theory, and design of MOS Field-Effect Transistors (MOSFETs), based on both single crystal and thin-film materials. This will be followed by application examples, including chemical/biological sensors in sensor technologies,ferroelectric and magnetic random access memories (FRAM and MRAM) in non-volatile memory technologies, and active matrix liquid crystal displays and micromechanical displays in display technologies. Emphasis will be placed on both device physics and application technology.
MOS Devices Introduction (3L)
Properties of MOS Capacitors, Capacitance - voltage characteristics; MOSFET structures and operation.
MOS Devices & Thin Film Transistors (5L)
Short channel and hot electron effects; Applications and future trends in miniaturising single crystal devices; Amorphous and polycrystalline silicon and other thin-film transistors. Organic thin-film transistors, Ion-sensitive thin, film trasistors and biosensors.
Non-Volatile Memory Devices and Displays (5L)
Ferroelectrics and ferroelectric random access memories; Giant magneto-resistance (GMR) and magnetic random access memories. Directly driven liquid crystal displays; Active matrix liquid crystal displays and projectors; Micromechanical projectors; Other types of displays and emerging technologies.
- Lecture Notes. 4B6 Lecture Notes
- S M Sze;" Physics of Semiconductor", John Wiley,1981, Chapters 7 and 8 (note that there is rather more than covered in the lectures).
- J Singh : Semiconductor Devices", John Wiley 2001
- Article "Thin -Film Transistors", by P Migliorato, in Encylopedia of Physical Science and Technology, (Excluding the mathematical derivations), distributed at the lectures.
- J F Scott: "Ferroelectric Memories", Springer, 2000.
Please see the Booklist for Group B Courses for references for this module.
Please refer to Form & conduct of the examinations.
The UK Standard for Professional Engineering Competence (UK-SPEC) describes the requirements that have to be met in order to become a Chartered Engineer, and gives examples of ways of doing this.
UK-SPEC is published by the Engineering Council on behalf of the UK engineering profession. The standard has been developed, and is regularly updated, by panels representing professional engineering institutions, employers and engineering educators. Of particular relevance here is the 'Accreditation of Higher Education Programmes' (AHEP) document which sets out the standard for degree accreditation.
The Output Standards Matrices indicate where each of the Output Criteria as specified in the AHEP 3rd edition document is addressed within the Engineering and Manufacturing Engineering Triposes.
Last modified: 31/05/2016 09:16