Engineering Tripos Part IIB, 4B2: Power Microelectronics, 2025-26
Module Leader
Lecturer
Prof F Udrea
Timing and Structure
Lent term. 14 lectures (includes one example class). Assessment: 100% exam. Lectures will be in person. Check timetable in Moodle.
Prerequisites
3B3 & 3B5 useful
Aims
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Content
Introduction
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
Power Diodes
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Field Control
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
Thyristors
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFET: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
IGBTs II
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Wide bandgap materials and devices.
Figure of merit (FOM) for wide bandgap materials. Architectures, designs and challenges of Silicon Carbide (SiC) and Gasllium Nitride (GaN) devices.
Coursework
n/a
Booklists
Please refer to the Booklist for Part IIB Courses for references to this module, this can be found on the associated Moodle course.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 04/06/2025 13:26
Engineering Tripos Part IIB, 4B2: Power Microelectronics, 2017-18
Module Leader
Lecturer
Prof F Udrea
Timing and Structure
Michaelmas term. 14 lectures + 2 examples classes. Assessment: 100% exam.
Prerequisites
3B3 & 3B5 useful
Aims
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Content
Introduction
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
Power Diodes
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Field Control
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
Thyristors
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFE: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
IGBTs II
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Coursework
Optional - Finite element design and analysis of novel high voltage devices in the HVM Lab led by Dr F Udrea
Booklists
Please see the Booklist for Group B Courses for references for this module.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 06/06/2017 13:57
Engineering Tripos Part IIB, 4B2: Power Microelectronics, 2021-22
Module Leader
Lecturer
Prof F Udrea
Timing and Structure
Michaelmas term. 14 lectures (includes one example class). Assessment: 100% exam. Note: First two lectures are ONLINE. check timetable in Moodle.
Prerequisites
3B3 & 3B5 useful
Aims
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Content
Introduction
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
Power Diodes
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Field Control
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
Thyristors
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFET: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
IGBTs II
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Wide bandgap materials and devices.
Figure of merit (FOM) for wide bandgap materials. Architectures, designs and challenges of Silicon Carbide (SiC) and Gasllium Nitride (GaN) devices.
Coursework
n/a
Booklists
Please refer to the Booklist for Part IIB Courses for references to this module, this can be found on the associated Moodle course.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 05/10/2021 11:56
Engineering Tripos Part IIB, 4B2: Power Microelectronics, 2019-20
Module Leader
Lecturer
Prof F Udrea
Timing and Structure
Michaelmas term. 14 lectures + 2 examples classes. Assessment: 100% exam.
Prerequisites
3B3 & 3B5 useful
Aims
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Content
Introduction
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
Power Diodes
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Field Control
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
Thyristors
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFE: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
IGBTs II
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Coursework
Optional - Finite element design and analysis of novel high voltage devices in the HVM Lab led by Dr F Udrea
Booklists
Please see the Booklist for Group B Courses for references for this module.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 23/05/2019 15:59
Engineering Tripos Part IIB, 4B2: Power Microelectronics, 2023-24
Module Leader
Lecturer
Prof F Udrea
Timing and Structure
Michaelmas term. 14 lectures (includes one example class). Assessment: 100% exam. Lectures will be in person. Check timetable in Moodle.
Prerequisites
3B3 & 3B5 useful
Aims
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Content
Introduction
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
Power Diodes
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Field Control
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
Thyristors
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFET: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
IGBTs II
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Wide bandgap materials and devices.
Figure of merit (FOM) for wide bandgap materials. Architectures, designs and challenges of Silicon Carbide (SiC) and Gasllium Nitride (GaN) devices.
Coursework
n/a
Booklists
Please refer to the Booklist for Part IIB Courses for references to this module, this can be found on the associated Moodle course.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 30/05/2023 15:26
Engineering Tripos Part IIB, 4B2: Power Microelectronics, 2020-21
Module Leader
Lecturer
Prof F Udrea
Timing and Structure
Michaelmas term. 14 lectures + 2 examples classes. Assessment: 100% exam.
Prerequisites
3B3 & 3B5 useful
Aims
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Content
Introduction
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
Power Diodes
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Field Control
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
Thyristors
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFE: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
IGBTs II
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Coursework
Optional - Finite element design and analysis of novel high voltage devices in the HVM Lab led by Dr F Udrea
Booklists
Please refer to the Booklist for Part IIB Courses for references to this module, this can be found on the associated Moodle course.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 01/09/2020 10:25
Engineering Tripos Part IIB, 4B2: Power Microelectronics, 2022-23
Module Leader
Lecturer
Prof F Udrea
Timing and Structure
Michaelmas term. 14 lectures (includes one example class). Assessment: 100% exam. Lectures will be in person. Check timetable in Moodle.
Prerequisites
3B3 & 3B5 useful
Aims
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Content
Introduction
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
Power Diodes
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Field Control
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
Thyristors
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFET: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
IGBTs II
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Wide bandgap materials and devices.
Figure of merit (FOM) for wide bandgap materials. Architectures, designs and challenges of Silicon Carbide (SiC) and Gasllium Nitride (GaN) devices.
Coursework
n/a
Booklists
Please refer to the Booklist for Part IIB Courses for references to this module, this can be found on the associated Moodle course.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 06/10/2022 10:02
Engineering Tripos Part IIB, 4B2: Power Microelectronics, 2018-19
Module Leader
Lecturer
Prof F Udrea
Timing and Structure
Michaelmas term. 14 lectures + 2 examples classes. Assessment: 100% exam.
Prerequisites
3B3 & 3B5 useful
Aims
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Content
Introduction
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
Power Diodes
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Field Control
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
Thyristors
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFE: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
IGBTs II
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Coursework
Optional - Finite element design and analysis of novel high voltage devices in the HVM Lab led by Dr F Udrea
Booklists
Please see the Booklist for Group B Courses for references for this module.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 17/05/2018 13:36
Engineering Tripos Part IIB, 4A15: Aeroacoustics, 2017-18
Module Leader
Lecturers
Dr Agarwal, Professor Ann Dowling and Professor Nigel Peake
Timing and Structure
16 lectures + 2 examples classes; Assessment: 100% exam
Prerequisites
3A1 assumed
Aims
The aims of the course are to:
- analyse and solve a range of practical engineering problems associated with acoustics.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand how sound is generated.
- understand how sound propagates in free space and within ducts.
- understand shielding and scattering of sound.
- model sound sources for various aeroacoustic problems and design for low noise.
Content
The students are expected to analyse and solve a range of practical engineering problems associated with acoustics. Examples include modelling of noise sources from jets, fans, wind turbines, vacuum cleaners, etc. and exploring ways to reduce noise either at the source or through acoustic damping. Upon completion of this module, the students would be well placed to pursue research in the area of acoustics and related fields. Students would also be more employable (the topics covered in the course is of interest to GE, Rolls-Royce, Dyson, Mitsubishi Heavy Industries, automobile companies and acoustic consultancies)
Classical Acoustics (5L) (Dr A Agarwal)
- The wave equation and simple solutions
- Impedance
- Energy
- Generalised functions and Green’s function
- Sound from simple sources (monopoles, dipole, compact sources)
Jet noise (3L) (Dr A Agarwal)
- Compact quadrupole
- Sound from a single eddy
- Sound from a random distribution of eddies
- Lighthill’s eighth-power law
- Convection and refraction effects
Sound propagation (2L) (Prof. N. Peake)
- Ray theory
- Snell’s law
- Refraction by temperature gradients
Trailing edge noise (2L) (Prof. N. Peake)
- Scattering and shielding
- Scattering from a source near a sharp edge
- Example: Wind turbine noise and the aeroacoustics of the owl
Duct acoustics (2L) (Prof. A P Dowling)
- Normal modes
- Concept of cut-off modes
- Damping/liner
- Helmholtz resonator
- Example: Thermoacoustic instability
Rotor/Fan Noise (2L) (Prof. A P Dowling)
- Rotor alone noise
- Rotor/Stator interaction noise
- Examples: Aircraft noise, fan and turbine noise
Booklists
Please see the Booklist for Group A Courses for references for this module.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US2
A comprehensive knowledge and understanding of mathematical and computer models relevant to the engineering discipline, and an appreciation of their limitations.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 01/06/2018 12:07
Engineering Tripos Part IIB, 4A15: Aeroacoustics, 2020-21
Module Leader
Lecturers
Dr A. Agarwal and Dr A. Gregory
Timing and Structure
Lent term: 16 lectures + 2 examples classes; Assessment: 100% exam
Prerequisites
3A1 useful, 3C6 useful
Aims
The aims of the course are to:
- analyse and solve a range of practical engineering problems associated with acoustics.
Objectives
As specific objectives, by the end of the course students should be able to:
- understand what sound is and how we perceive it
- understand how sound is generated and propagated
- understand the acoustics of a wide range of music and noise production
Content
We will analyse and solve a range of practical engineering problems associated with acoustics. Examples include modelling of noise sources from jets, fans, musical instruments, human voice, kettles, dripping taps, whistling mice, singing flames, etc. We will also study ways to reduce noise either at the source or through acoustic damping. Upon completion of this module, the students would be well placed to pursue academic research in the area of acoustics and related fields or to work in industry (the topics covered in the course is of interest to GE, Rolls-Royce, Airbus, Dyson, Mitsubishi Heavy Industries, automotive companies, music industry, and acoustic consultancies).
What is sound and how does it propagate? (5L) (Dr A Gregoryl)
- Introduction
- The wave equation
-
Some simple 3D wave fields (plane waves, surface waves and spherical waves)
- Sound transmission through different media
Simples sounds sources (2L) (Dr A Agarwal)
- Pulsating sphere
- Oscillating sphere
- Example: loudspeaker with and without a cabinet
General solution to wave eqn (2L) (Dr. A Gregory)
- Green's function
- Sound from general mass and force sources (examples, Bliz siren and singing telephone wires)
Jet noise (Dr A Agarwal) (1 L)
- Scaling of jet noise. How much does jet noise increase by if we double the jet's velocity?
- What do jets and tuning forks have in common?
- Lighthill's acoustic analogy
- Sound of aircraft jets and handdriers
Duct acoustics (2 L) (Dr A Agarwal)
- Rectangular ducts (example, sound box)
- Low-frequency sound in ducts
- Circular ducts
- Acoustic liners (Helmholtz resonator, blowing over a beer bottle)
Musical acoustics & everyday things (3L) (Drs A Agarwal and A Gregory)
- String instruments
- Wind instruments
- Brass instruments
- Whistling of steam kettles and Rayleigh's Bird Call
- Acoustics of dripping taps
Vocalisation (0.5 L) (Dr A Gregory)
- Human speech, singing and overtone singing
- Mice mating calls
Fan noise (1L) (Dr A Agarwal)
- Rotor alone noise
- Rotor-stator interaction noise
Thermoacoustics instability (0.5 L) (Dr A Agarwal)
- Rijke tube experiment (singing flames)
Booklists
Please refer to the Booklist for Part IIB Courses for references to this module, this can be found on the associated Moodle course.
Examination Guidelines
Please refer to Form & conduct of the examinations.
UK-SPEC
This syllabus contributes to the following areas of the UK-SPEC standard:
Toggle display of UK-SPEC areas.
GT1
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
IA1
Apply appropriate quantitative science and engineering tools to the analysis of problems.
IA2
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
KU1
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
KU2
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
E1
Ability to use fundamental knowledge to investigate new and emerging technologies.
E2
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
E3
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
P1
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
P3
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
US1
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
US2
A comprehensive knowledge and understanding of mathematical and computer models relevant to the engineering discipline, and an appreciation of their limitations.
US4
An awareness of developing technologies related to own specialisation.
Last modified: 01/09/2020 10:25
Pages
