Prof F Udrea
Timing and Structure
Michaelmas term. 14 lectures (includes one example class). Assessment: 100% exam. Lectures will be in person. Check timetable in Moodle.
3B3 & 3B5 useful
The aims of the course are to:
- provide an introduction to the world of modern power semiconductor devices, and their applications in the electronics Industry.
- cover material specific to power semiconductor devices not covered in other modules in semiconductors.
As specific objectives, by the end of the course students should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- explain the practical operating conditions pertaining to power semiconductor devices
- analyse power circuit segments
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. P-N junction theory.
High voltage pn junction theory. Breakdown theory. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection. Lifetime. Turn-off reverse recovery
Curvature effects in high voltage junctions, Edge effects, Field plates, Terminations in power devices.
Power Bipolar Devices
Bipolar Juction transistor (BJT).
The thyristor (concept & technology). The GTO thyristor, Switching aids for transistors and thyristors.
Power MOS Devices
The power MOSFET: Concept, modes of operation. trade-offs.
Power MOSFET Modelling
The power MOSFET modelling, technologies and advanced devices.
Insulted Gate Bipolar Transistors
The Insulted Gate Bipolar Transistor (IGBT): modes of operation. trade-offs.
The IGBTs, modelling, technologies and advanced concepts.
Power Integrated Circuits (PICs)
Power Intergated Circuits (PICS) and High Voltage Integrated Circuits (HVICs): introduction, lateral devices for PICs and HVICs, concepts, modes of operation.
Wide bandgap materials and devices.
Figure of merit (FOM) for wide bandgap materials. Architectures, designs and challenges of Silicon Carbide (SiC) and Gasllium Nitride (GaN) devices.
Please refer to the Booklist for Part IIB Courses for references to this module, this can be found on the associated Moodle course.
Please refer to Form & conduct of the examinations.
This syllabus contributes to the following areas of the UK-SPEC standard:
Develop transferable skills that will be of value in a wide range of situations. These are exemplified by the Qualifications and Curriculum Authority Higher Level Key Skills and include problem solving, communication, and working with others, as well as the effective use of general IT facilities and information retrieval skills. They also include planning self-learning and improving performance, as the foundation for lifelong learning/CPD.
Apply appropriate quantitative science and engineering tools to the analysis of problems.
Demonstrate creative and innovative ability in the synthesis of solutions and in formulating designs.
Demonstrate knowledge and understanding of essential facts, concepts, theories and principles of their engineering discipline, and its underpinning science and mathematics.
Have an appreciation of the wider multidisciplinary engineering context and its underlying principles.
Ability to use fundamental knowledge to investigate new and emerging technologies.
Ability to extract data pertinent to an unfamiliar problem, and apply its solution using computer based engineering tools when appropriate.
Ability to apply mathematical and computer based models for solving problems in engineering, and the ability to assess the limitations of particular cases.
A thorough understanding of current practice and its limitations and some appreciation of likely new developments.
Understanding of contexts in which engineering knowledge can be applied (e.g. operations and management, technology, development, etc).
A comprehensive understanding of the scientific principles of own specialisation and related disciplines.
An awareness of developing technologies related to own specialisation.
Last modified: 30/05/2023 15:26